Record Details

?????????? ?????????? ??????????????? ????????????? ?????????? ???????-????????? ??????

Електронний архів Житомирського державного технологічного університету

View Archive Info
 
 
Field Value
 
Title ?????????? ?????????? ??????????????? ????????????? ?????????? ???????-????????? ??????
Research electrophysical characteristics of silicon impatt diodes
 
Creator ??????????, ?.?.
Slipokurov, V.S.
 
Subject ???????-????????? ????
?????-??????? ??????????????
Si
SiC
GaAs
InP
???????????? ????????
???????
?????????
IMPATT diode current-voltage characteristics
Si
SiC
GaAs
InP
terahertz range
diffusion
generation
 
Description ??????????????? ??????????? ???????-????????? ?????? ??????????????????? ?????????
????? ?? ????? ??????????? ????????? ???????. ???????? ?????????? ?? ????????? ????????
?????????? ?????????????????? ???????? ?? ?????? Si, SiC, GaAs, ??? ? ?????????? ???????,
??????? ? ??????? ?? ?????? InP. ???????? ???????? ???????? ?? ???????? ?????????? ??????????
????????????? ???????-????????? ?????? ?? ????, ?? ?????? ?? ???????? ? ???????? ??????? ??
???????????? ? ???????????. ???? ?????????? ???????????? ? ?????? ????????? ??????????
?????????????????? ????????, ??????? ? ??????? ?? ?????? ?????????? ????? ?3?5. ???????????
??????????? ?????? ??????????? ?????? ?? ????????? ????? ?????-???????? ??????????????
(???). ????????? ????????? ???????????????? ????? p-n-??????? ??????????? ???????-??????????
????? ?? ?????? ???.
Systematized design IMPATT diode microwave wavelength range by type modifications span region. Show results as obtained output parameters of semiconductor devices based on Si, SiC, GaAs and theoretically possible including diodes based on InP. These values indicate a preference to silicon technology design IMPATT diodes as such, which as of today is the most studied and implemented in production. These results are compared with other output value of semiconductor devices, including diodes on the basis of group A3B5. Study is done by measuring the direct and reverse branches of the current-voltage characteristics. The mechanism of current through pn-junction silicon IMPATT diode for direct current-voltage characteristics.
 
Date 2016-03-31T10:55:04Z
2016-03-31T10:55:04Z
2014
 
Type Article
 
Identifier http://eztuir.ztu.edu.ua/123456789/2452
 
Language uk
 
Relation ?????? ????: ?????: ???????? ?????;1(68)
 
Publisher ????