??????? ???????? ? ??????????? ????????? TiBx ??? ?????? ????? ?? ?????? InP
Електронний архів Житомирського державного технологічного університету
View Archive Info| Field | Value | |
| Title |
??????? ???????? ? ??????????? ????????? TiBx ??? ?????? ????? ?? ?????? InP
Cathode contact with diffusion barriers TiBx for Gunn diodes based on InP |
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| Creator |
?????????, ?.?.
Novitskii, S.V. |
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| Subject |
??????? ???????
???? ????? ?????? ????? ?????? ???????????? ??????? ?-??????????? ????? ?????? ????????????? ??????? ohmic contact Gunn diode indium ohmic contact rapid thermal annealing titanium boride microwave treatment |
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| Description |
????????????? ??????? ???????, ?? ???????????? ??? ???? ????????? ??????? ? ????????????? ??????? ????????? ?? n-InP ? ?????????? ???'???? TiBx. ?? ???????? ?????? ????????????????? ????????????? ???????, ?????? ???????? ??????? (???) ?? ?-??????????? 60??. ???????????, ?? ?????? ???????? Au-TiBx-Ge-Au-n-n+-n++-InP, ?? ?????????? ???????????? ?????????? ? ????????? ??? ??? ??????????? 450 ??, ?????????? ???? ????????? ? ???????? ???????? ??????????? ????? ??? ??????? ???????????? ????? ?????. ?????? ???? ???????? ????????? ???????????? ?????????? ???????? ??????????? ????? ???????? ???????? Au-Ge-TiBx-Au ?? nn+- n++-InP ? ????????? ?????????? 80?380 ?, ??? ???? ???????? ?????????????????? ?? ????????? ??????, ?? ???????? ????? ?????????? ? ????????? ???, ? ??????????? ????????? ???????????? ?????? ?????????? ??????????? ??????????. The investigation of physical processes in multilayer ohmic contacts to n-InP with TiBx diffusion barrier subjected to external actions, such as microwave irradiation, rapid thermal annealing (RTA) and 60?? ?-irradiation. It was found that Au-TiBx-Ge-Au-n-n+-n++-InP ohmic contacts formed using magnetron sputtering followed by RTA at a temperature of 450 ?? retain their structure and contact resistivity value at Gunn diode operating temperatures. The contacts subjected to RTA at T = 400 ?? followed by 60?? ?-irradiation up to a dose of 107 Gy demonstrated degradation processes caused by oxygen diffusion through the TiBx film. For the first time, a growing temperature dependence of contact resistivity was obtained for Au-Ge-TiBx-Au ohmic contact to n-n+-n++-InP in the 80?380 K temperature range. This was explained by current flow through metal shunts associated with dislocations that short-circuit space-charge region, with allowance made for current limitation by diffusion supply of electrons. |
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| Date |
2016-03-21T12:12:28Z
2016-03-21T12:12:28Z 2014 |
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| Type |
Article
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| Identifier |
http://eztuir.ztu.edu.ua/123456789/2132
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| Language |
uk
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| Relation |
?????? ????. ?????: ???????? ?????;4(71)
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| Publisher |
????
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