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??????? ???????? ? ??????????? ????????? TiBx ??? ?????? ????? ?? ?????? InP

Електронний архів Житомирського державного технологічного університету

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Title ??????? ???????? ? ??????????? ????????? TiBx ??? ?????? ????? ?? ?????? InP
Cathode contact with diffusion barriers TiBx for Gunn diodes based on InP
 
Creator ?????????, ?.?.
Novitskii, S.V.
 
Subject ??????? ???????
???? ?????
?????? ?????
?????? ???????????? ???????
?-???????????
????? ??????
????????????? ???????
ohmic contact
Gunn diode
indium ohmic contact
rapid thermal annealing
titanium boride
microwave treatment
 
Description ????????????? ??????? ???????, ?? ???????????? ??? ???? ????????? ??????? ? ?????????????
??????? ????????? ?? n-InP ? ?????????? ???'???? TiBx. ?? ???????? ?????? ?????????????????
????????????? ???????, ?????? ???????? ??????? (???) ?? ?-??????????? 60??. ???????????, ??
?????? ???????? Au-TiBx-Ge-Au-n-n+-n++-InP, ?? ?????????? ???????????? ?????????? ?
????????? ??? ??? ??????????? 450 ??, ?????????? ???? ????????? ? ???????? ????????
??????????? ????? ??? ??????? ???????????? ????? ?????. ?????? ???? ???????? ?????????
???????????? ?????????? ???????? ??????????? ????? ???????? ???????? Au-Ge-TiBx-Au ?? nn+-
n++-InP ? ????????? ?????????? 80?380 ?, ??? ???? ???????? ?????????????????? ??
????????? ??????, ?? ???????? ????? ?????????? ? ????????? ???, ? ??????????? ?????????
???????????? ?????? ?????????? ??????????? ??????????.
The investigation of physical processes in multilayer ohmic contacts to n-InP with TiBx diffusion barrier subjected to external actions, such as microwave irradiation, rapid thermal annealing (RTA) and 60?? ?-irradiation. It was found that Au-TiBx-Ge-Au-n-n+-n++-InP ohmic contacts formed using magnetron sputtering followed by RTA at a temperature of 450 ?? retain their structure and contact resistivity value at Gunn diode operating temperatures. The contacts subjected to RTA at T = 400 ?? followed by 60?? ?-irradiation up to a dose of 107 Gy demonstrated degradation processes caused by oxygen diffusion through the TiBx film.
For the first time, a growing temperature dependence of contact resistivity was obtained for Au-Ge-TiBx-Au ohmic contact to n-n+-n++-InP in the 80?380 K temperature range. This was explained by current flow through metal shunts associated with dislocations that short-circuit space-charge region, with allowance made for current limitation by diffusion supply of electrons.
 
Date 2016-03-21T12:12:28Z
2016-03-21T12:12:28Z
2014
 
Type Article
 
Identifier http://eztuir.ztu.edu.ua/123456789/2132
 
Language uk
 
Relation ?????? ????. ?????: ???????? ?????;4(71)
 
Publisher ????